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Power Electronics: Thyristor-Controlled Rectifiers

This section develops the SCR structure, two-transistor equivalent and VV–II characteristic, derives controlled-rectifier average voltage, and compares switched-mode and linear supplies. Rectifier formulas depend on the load and on whether load current is continuous or discontinuous; those conditions are stated with each result.

A silicon-controlled rectifier is a unidirectional, four-layer p1n1p2n2p_1n_1p_2n_2, three-junction power device with anode (A), cathode (K) and gate (G) terminals. It is a bistable, latching switch: a gate pulse can turn it on while it is forward biased, but the gate cannot normally turn it off.

The anode is connected to the outer p1p_1 layer, the cathode to n2n_2, and the gate to the inner p2p_2 layer near the cathode. The central junction J2J_2 is the forward-blocking junction.

Native representation of SCR p-n-p-n construction and symbol.

Native representation of SCR pp-nn-pp-nn construction and symbol.

  1. Reverse blocking: A is negative with respect to K. Junctions J1J_1 and J3J_3 are reverse biased and only reverse leakage flows. Reverse breakdown is normally destructive.

  2. Forward blocking: A is positive and IG=0I_G=0. Junctions J1,J3J_1,J_3 are forward biased, but J2J_2 is reverse biased. The device blocks until the forward breakover voltage VBOV_{BO} is reached.

  3. Forward conduction: A positive gate-current pulse injects carriers into p2p_2 and starts regeneration. The SCR snaps to a low on-state voltage, typically about 11–2 V2\,\text{V}, and anode current is then limited by the external circuit.

The four layers can be separated into a PNP transistor T1T_1 and an NPN transistor T2T_2. Each collector supplies the other transistor’s base current, creating positive feedback. The gate injects current into the base region of T2T_2.

Cross-coupled PNP–NPN equivalent of an SCR.

Cross-coupled PNP–NPN equivalent of an SCR.

Let α1,α2\alpha_1,\alpha_2 be the common-base current gains and ICBO1,ICBO2I_{CBO1},I_{CBO2} the collector leakage currents. Then

IC1=α1IA+ICBO1,IC2=α2IK+ICBO2.I_{C1}=\alpha_1 I_A+I_{CBO1}, \qquad I_{C2}=\alpha_2 I_K+I_{CBO2}.

Kirchhoff’s current law gives IK=IA+IGI_K=I_A+I_G and IA=IC1+IC2I_A=I_{C1}+I_{C2}. Therefore

IA=α1IA+ICBO1+α2(IA+IG)+ICBO2,IA{1−(α1+α2)}=ICBO1+ICBO2+α2IG.\begin{aligned} I_A&=\alpha_1I_A+I_{CBO1} +\alpha_2(I_A+I_G)+I_{CBO2},\\ I_A\{1-(\alpha_1+\alpha_2)\} &=I_{CBO1}+I_{CBO2}+\alpha_2I_G. \end{aligned}

SCR static characteristic; the gate shifts the forward turn-on point.

SCR static characteristic; the gate shifts the forward turn-on point.

MethodMechanism and significance
Gate triggeringA rated positive G–K current pulse injects carriers; this is the normal, controllable method.
Forward breakoverRaising VAKV_{AK} to VBOV_{BO} avalanches J2J_2; normally avoided because it stresses the device.
dv/dtdv/dt triggeringJunction capacitance carries i=Cj dv/dti=C_j\,dv/dt; excessive displacement current can start regeneration.
Thermal triggeringHigher temperature increases leakage and gains; unintended turn-on can lead to thermal failure.
Light triggeringOptical carriers initiate regeneration in a light-activated SCR (LASCR), useful for high-voltage isolation.

SCR turn-on mechanisms.

An SCR is commutated only when anode current falls below IHI_H for at least tqt_q:

  • Natural or line commutation: AC load current crosses zero and the supply then reverse biases the SCR. This is the usual rectifier process.

  • Forced commutation: in DC circuits, an auxiliary switch and a capacitor/inductor network impose reverse current or voltage so net SCR current becomes zero.

StressWhy it is dangerousProtection
High dv/dtdv/dtCapacitive current through J2J_2 can cause false turn-onSeries RC snubber across the SCR; controlled layout
High turn-on di/dtdi/dtConduction initially occupies a small cathode area, causing a hot spotSeries inductance and a gate pulse with adequate amplitude and rise time
OvercurrentJunction heating or surge destructionSemiconductor fuse/MCB, current limiting and coordinated surge rating
OvervoltageExceeds VDRMV_{DRM} or VRRMV_{RRM}MOV/TVS clamp, snubber and adequate repetitive/non-repetitive voltage margin
OvertemperatureLeakage rises and ratings fall as TjT_j risesHeat sink, thermal interface, airflow and thermal shutdown

Principal SCR stresses and practical protection.

Important data-sheet quantities are VDRMV_{DRM}, VRRMV_{RRM}, average/RMS/surge on-state current, IGTI_{GT}, VGTV_{GT}, ILI_L, IHI_H, tqt_q, allowable dv/dtdv/dt and di/dtdi/dt, and maximum junction temperature.

A diode bridge reverses the negative input half-cycle at the load. It requires no centre-tapped transformer and uses the entire secondary on both half-cycles.

Full-wave bridge and ideal conduction/output waveforms.

Full-wave bridge and ideal conduction/output waveforms.

For ideal diodes and vs=Vmsin⁡θv_s=V_m\sin\theta, vo=Vm∣sin⁡θ∣v_o=V_m|\sin\theta|. Thus

Here γ\gamma is ripple factor and η\eta is ideal rectification efficiency for an RR load. In a practical silicon bridge, two diodes conduct in series, so vo≃∣vs∣−2VDv_o\simeq |v_s|-2V_D while conducting. Transformer utilisation is better than in a half-wave circuit. A capacitor or LC filter can reduce ripple, but it also makes diode and transformer currents more sharply pulsed.

QuantityHalf-waveFull-wave bridge
VdcV_{dc}Vm/π=0.318VmV_m/\pi=0.318V_m2Vm/π=0.637Vm2V_m/\pi=0.637V_m
VrmsV_{rms}Vm/2V_m/2Vm/2V_m/\sqrt{2}
Ripple factor1.211.210.4820.482
Maximum efficiency40.6%40.6\%81.2%81.2\%
Ripple frequencyff2f2f
PIV per deviceVmV_mVmV_m

Ideal half-wave and bridge-rectifier comparison.

For a centre-tapped full-wave rectifier, PIV is 2Vm2V_m per diode when VmV_m is the peak of one half-secondary; this must not be confused with bridge PIV.

The firing angle α\alpha is the delay, measured from the natural forward-voltage zero crossing, at which the gate pulse turns on a forward- biased SCR. Changing α\alpha changes the conduction interval and hence the average output.

Half-wave controlled rectifier with an RR load

Section titled “Half-wave controlled rectifier with an RRR load”

Half-wave SCR phase controller and delayed R-load waveform (illustrated at α = 60^(∘)).

Half-wave SCR phase controller and delayed RR-load waveform (illustrated at α=60∘\alpha=60^\circ).

During 0<θ<α0<\theta<\alpha, the SCR is forward biased but off. The gate pulse at θ=α\theta=\alpha turns it on; with a pure resistance, io=vo/Ri_o=v_o/R and conduction lasts only to π\pi. At the supply zero crossing, current falls below IHI_H and natural commutation turns the SCR off. It remains reverse biased throughout the negative half-cycle. Hence

vo(θ)={Vmsin⁡θ,α≤θ≤π,0,otherwise over 0≤θ<2π.v_o(\theta)= \begin{cases} V_m\sin\theta, & \alpha\leq\theta\leq\pi,\\ 0, & \text{otherwise over }0\leq\theta<2\pi. \end{cases}

The average over a complete supply cycle is

Vdc=12π∫απVmsin⁡θ dθ=Vm2π[−cos⁡θ]απ.\begin{aligned} V_{dc} &=\frac{1}{2\pi}\int_{\alpha}^{\pi}V_m\sin\theta\,d\theta\\ &=\frac{V_m}{2\pi}[-\cos\theta]_{\alpha}^{\pi}. \end{aligned}

For a full-wave centre-tapped circuit, alternate SCRs are fired at α\alpha and π+α\pi+\alpha. A bridge may use two SCRs plus two diodes (half-controlled) or four SCRs (fully controlled).

For a pure RR load, load current reaches zero at every supply zero crossing. Two identical positive output pulses occur per cycle:

Vdc,R=12π[2∫απVmsin⁡θ dθ]=Vmπ(1+cos⁡α).\begin{aligned} V_{dc,R} &=\frac{1}{2\pi}\left[ 2\int_{\alpha}^{\pi}V_m\sin\theta\,d\theta\right]\\ &=\boxed{\frac{V_m}{\pi}(1+\cos\alpha)}. \end{aligned}

For a fully controlled four-SCR bridge with a sufficiently inductive load, current is assumed continuous. Each diagonal pair conducts for π\pi radians, including an interval in which output voltage is negative:

Vdc,cont=1π∫απ+αVmsin⁡θ dθ=2Vmπcos⁡α.\begin{aligned} V_{dc,\mathrm{cont}} &=\frac{1}{\pi}\int_{\alpha}^{\pi+\alpha} V_m\sin\theta\,d\theta\\ &=\boxed{\frac{2V_m}{\pi}\cos\alpha}. \end{aligned}
FeatureHalf-waveHalf-controlled bridgeFully controlled bridge
Power devicesOne SCRTwo SCRs and two diodesFour SCRs
Output useOne half-cycleBoth half-cyclesBoth half-cycles
Ripple frequencyff2f2f2f2f
Average-output signNon-negativeNon-negativePositive or negative with continuous current and an active load
RegenerationNoNoPossible
Control/complexityLowestModerateGreatest

Single-phase controlled-rectifier comparison.

Increasing α\alpha reduces average output and usually worsens input power factor and harmonic distortion. Full-wave conversion gives higher output, higher ripple frequency and easier filtering than half-wave conversion.

For completeness, industrial high-power converters commonly use three phases. With Vph,mV_{ph,m} the phase-to-neutral peak and VLLV_{LL} the line-to-line RMS voltage, ideal continuous-current averages are

Vdc,3-pulse=33Vph,m2πcos⁡α,V_{dc,3\text{-pulse}} =\frac{3\sqrt{3}V_{ph,m}}{2\pi}\cos\alpha, Vdc,6-pulse=33Vph,mπcos⁡α=32VLLπcos⁡α≃1.35VLLcos⁡α.\boxed{V_{dc,6\text{-pulse}} =\frac{3\sqrt{3}V_{ph,m}}{\pi}\cos\alpha =\frac{3\sqrt{2}V_{LL}}{\pi}\cos\alpha \simeq1.35V_{LL}\cos\alpha.}

The three-pulse circuit uses three SCRs; the six-pulse bridge uses six SCRs and produces lower output ripple than a single-phase converter.

A linear supply transforms at mains frequency, rectifies and filters, then operates a series-pass device in its active region. An SMPS rectifies where necessary, switches energy at high frequency, transfers or stores it in magnetic components, rectifies/filters the output and closes a feedback loop around duty ratio.

Energy and control flow in linear and switched-mode supplies.

Energy and control flow in linear and switched-mode supplies.

For a linear regulator, ignoring quiescent current,

For ideal continuous-conduction switching converters with duty ratio DD,

A forward converter transfers energy to the secondary while its switch is on; a flyback stores energy in magnetising inductance while on and delivers it to the secondary while off. Buck, boost and buck–boost stages are normally non-isolated; flyback, forward and bridge-derived converters can provide galvanic isolation.

PropertySMPSLinear supply
EfficiencyTypically 8080–95%95\% or higherOften 3030–60%60\% when the voltage drop is large
Size and massSmall high-frequency magnetics; high power densityBulky 50/60-Hz transformer and heat sink
Conversion rangeStep-down, step-up, inversion, wide input and multiple isolated outputsMainly step-down; constrained by dropout and dissipation
HeatLow when switching and magnetic losses are controlledHigh pass-device loss for large Vin−VoV_{in}-V_o
Noise/EMISwitching ripple and conducted/radiated EMI require filtering and careful layoutVery low switching noise and EMI
ComplexityController, compensation, gate drive, magnetics and protectionSimple regulator; easier design and fault finding
Best useComputers, chargers, telecom and portable/high-power equipmentPrecision analog, audio, laboratory and very low-noise rails

SMPS and linear power-supply comparison.

Practical SMPS design adds an input fuse, MOV and inrush limiter, common- and differential-mode EMI filters, cycle-by-cycle current limiting, snubbers or clamps, overvoltage and thermal shutdown, safe bulk-capacitor discharge, and adequate isolation creepage and clearance. Feedback crossing an isolation barrier commonly uses an optocoupler or isolated controller.

Electrical safety is the coordinated use of insulation, enclosures, earthing, automatic disconnection, isolation, energy limiting and safe work practices to prevent shock, burns, fire and equipment damage in normal use and under a credible single fault.

Layered Class-I protection: insulation, enclosure, PE, overcurrent protection and residual-current detection.

Layered Class-I protection: insulation, enclosure, PE, overcurrent protection and residual-current detection.

MeasureProtective action
Basic/reinforced insulation and enclosurePrevent contact with live parts; use adequate creepage, clearance, flame resistance and an appropriate IP rating. Class II equipment uses double/reinforced insulation and no PE.
Protective earthing (Class I)Bonds accessible metal to PE. A live-to-case fault follows a low-resistance path and operates the protective device rather than leaving the case hazardous.
Fuse or MCBInterrupts overload and short-circuit current to protect wiring and prevent fire. It is not sensitive enough to replace shock protection.
RCD/ELCBCompares live and neutral currents and disconnects on residual earth leakage. A 30 mA30\,\text{mA} RCD is commonly used as additional personal protection, but it does not replace a fuse/MCB, insulation or PE.
Isolation transformer/SELVProvides galvanic separation and limits available voltage/current, removing a direct mains-to-earth return path for a single secondary contact.
Surge and thermal protectionMOV/TVS devices clamp transients; thermal cut-outs and current limiting prevent excessive energy and temperature.
Cable and mechanical designCorrect conductor size, strain relief, secure terminals and guarded connectors prevent overheating and exposed conductors.
Inspection and testingVisual checks, earth continuity, insulation resistance, leakage and RCD tests reveal deterioration before service.

Electrical-hazard controls and the fault each addresses.

Before maintenance: de-energise, isolate, lock out/tag out, prove dead with a verified tester, discharge stored capacitors, and use appropriate tools and PPE. Relevant product standards include IEC 62368-1 for ICT/AV equipment and IEC 61010 for measurement and laboratory equipment; installation must also follow applicable national wiring rules.